Groundbreaking ceremony for Anhui Gahe Semiconductor's gallium oxide base Held in Chizhou
2026-06-12 16:02:44 [Print]
On June 8, the groundbreaking ceremony for the gallium oxide R&D and production comprehensive base of Anhui Gahe Semiconductor Co., Ltd. was held in the Chizhou Economic and Technological Development Zone.
The base focuses on technological R&D and large-scale mass production of gallium oxide materials. It will continuously drive technological iteration and innovation, tackling core indicators such as substrate size scaling, defect density control, and manufacturing yield improvement. By establishing a complete path from R&D to commercial production, the base aims to accelerate the translation of new productive forces into tangible industrial outcomes.
The base focuses on technological R&D and large-scale mass production of gallium oxide materials. It will continuously drive technological iteration and innovation, tackling core indicators such as substrate size scaling, defect density control, and manufacturing yield improvement. By establishing a complete path from R&D to commercial production, the base aims to accelerate the translation of new productive forces into tangible industrial outcomes.
Gallium Metal 99.99%min EXW China
Unit:RMB/kg
China gallium metal producers' output statistics by province by month
Unit: mt
