Six-billion-yuan third-generation semiconductor project settles in Fuzhou

A third-generation semiconductor GaN project with total investment of about 6 billion yuan (940 million US dollar) will be built by two phases in Changle District, Fuzhou.Asian Metal CopyrightA third-generation semiconductor GaN project with total investment of about 6 billion yuan 940 million US dollar will be built by two phases in Changle District, Fuzhou.Asian Metal Copyright The project will purchase 20 to 30 MOCCVD equipment and set up an 8-inch GaN factory which will become a leading GaN power device producer in China.
.Asian Metal Copyright The project will purchase 20 to 30 MOCCVD equipment and set up an 8-inch GaN factory which will become a leading GaN power device producer in ChinaAsian Metal Copyright