Guangzhou to build 3rd-generation semi-conductor innovation center construction project
2021-10-20 11:57:55 [Print]
It's reported that Guangzhou's 3rd-generation semi-conductor innovation center construction project was approved on October 12nd, 2021 and will start building in November 2021 with the building to be completed in July 2022.
With a total investment of RMB454 million (USD71.05 million), the project will be built by Guangzhou Institute of Technology under Xi'an University. Including a 3rd-generation semi-conductor gallium nitride R&D line and a pilot line, the project will have a pilot production capacity which is equivalent to 1,000 6-inch wafers per year.
The project was settled down in Huangpu, Guangzhou in late 2020 and will focus on technical fields related to large-size gallium nitride material epitaxial production, gallium nitride microwave millimeter wave device & integrated circuit, gallium nitride power electronic device & integrated circuit.
With a total investment of RMB454 million (USD71.05 million), the project will be built by Guangzhou Institute of Technology under Xi'an University. Including a 3rd-generation semi-conductor gallium nitride R&D line and a pilot line, the project will have a pilot production capacity which is equivalent to 1,000 6-inch wafers per year.
The project was settled down in Huangpu, Guangzhou in late 2020 and will focus on technical fields related to large-size gallium nitride material epitaxial production, gallium nitride microwave millimeter wave device & integrated circuit, gallium nitride power electronic device & integrated circuit.
Gallium Metal 99.99%min EXW China
Unit:RMB/kg
China gallium metal producers' number MoM output increase statistics by province by month
Unit: pcs
