Multiple compound semiconductor projects signed in Taizhou, Zhejiang
2021-07-30 15:29:53 [Print]
On July 27, the signing ceremony for major projects was held in Jiaojiang District, Taizhou, Zhejiang.
Ten high-end manufacturing and top talent projects were signed during the ceremony with total investment reaching 22.7 billion yuan (3.51 billion US dollars). The combined investment for two semiconductor projects, the germanium-silicon and gallium arsenide 3rd generation semiconductor project and the compound semiconductor substrate slice project, totaled 10.5 billion yuan (1.63 billion US dollars).
The germanium-silicon and gallium arsenide 3rd generation semiconductor project is jointly invested and developed by Guangzhou Orient Nan Yue Fund Management Co., Ltd. and China 2MCC Group Corporation Ltd., with total planned investment of 10 billion yuan (1.55 billion US dollars) and a land area of 500 Mu (33.33 hectares), including 200 Mu (13.33 hectares) for the phase one. The project will be located in Taizhou Bay Digital Economy Industrial Park and produce GeSi and GaAs 3rd generation semiconductor widely used in communication, automotive electronics, power, 5G base stations, Internet of Things (IOT), artificial intelligence, war industry and other fields. After reaching full capacity, the project is expected to generate annual production value of 9 billion yuan (1.39 billion US dollars), along with annual tax revenue of 1 billion yuan (155 million US dollars).
The compound semiconductor substrate slice project, with total planned investment of 500 million yuan (77.40 million US dollars) and a land area of 50 Mu (3.33 hectares), will build production lines with capacity of 2 million-piece-per-annum of 4-inch GaAs wafer and 1 million-piece-per-annum of 6-inch GaAs wafer. The total sales revenue from the project is expected to reach 800 million yuan (124 million US dollars) after the target capacity is met.
Ten high-end manufacturing and top talent projects were signed during the ceremony with total investment reaching 22.7 billion yuan (3.51 billion US dollars). The combined investment for two semiconductor projects, the germanium-silicon and gallium arsenide 3rd generation semiconductor project and the compound semiconductor substrate slice project, totaled 10.5 billion yuan (1.63 billion US dollars).
The germanium-silicon and gallium arsenide 3rd generation semiconductor project is jointly invested and developed by Guangzhou Orient Nan Yue Fund Management Co., Ltd. and China 2MCC Group Corporation Ltd., with total planned investment of 10 billion yuan (1.55 billion US dollars) and a land area of 500 Mu (33.33 hectares), including 200 Mu (13.33 hectares) for the phase one. The project will be located in Taizhou Bay Digital Economy Industrial Park and produce GeSi and GaAs 3rd generation semiconductor widely used in communication, automotive electronics, power, 5G base stations, Internet of Things (IOT), artificial intelligence, war industry and other fields. After reaching full capacity, the project is expected to generate annual production value of 9 billion yuan (1.39 billion US dollars), along with annual tax revenue of 1 billion yuan (155 million US dollars).
The compound semiconductor substrate slice project, with total planned investment of 500 million yuan (77.40 million US dollars) and a land area of 50 Mu (3.33 hectares), will build production lines with capacity of 2 million-piece-per-annum of 4-inch GaAs wafer and 1 million-piece-per-annum of 6-inch GaAs wafer. The total sales revenue from the project is expected to reach 800 million yuan (124 million US dollars) after the target capacity is met.
Gallium Metal 99.99%min EXW China
Unit:RMB/kg
China gallium metal producers' output statistics by province by month
Unit: mt
