Innoscience announces mass production of 8-inch GaN wafer at Suzhou production base
2021-06-10 15:58:00 [Print]
Innoscience (Suzhou) Semiconductor Co., Ltd. held a ceremony on June 5 to celebrate the mass production of 8-inch gallium nitride (GaN) wafer at its Suzhou production base as well as the start of construction of the R&D building.
The project is located at Fenhu High-Tech Zone in Wujiang District, Suzhou, Jiangsu. With phase one investment of RMB8 billion (USD1.25 billion), the project covers an area of 213Mu (14.2 hectares) and is expected to release capacity of 6,000 pieces per month by the end of 2021 based on current schedule. When reaching full capacity, the project will produce 780,000 pieces per year of 8-inch GaN wafer with annual production value of RMB12 billion (USD1.88 billion) and profit and tax exceeding RMB1.5 billion (USD235 million).
The project is located at Fenhu High-Tech Zone in Wujiang District, Suzhou, Jiangsu. With phase one investment of RMB8 billion (USD1.25 billion), the project covers an area of 213Mu (14.2 hectares) and is expected to release capacity of 6,000 pieces per month by the end of 2021 based on current schedule. When reaching full capacity, the project will produce 780,000 pieces per year of 8-inch GaN wafer with annual production value of RMB12 billion (USD1.88 billion) and profit and tax exceeding RMB1.5 billion (USD235 million).
Gallium Metal 99.99%min EXW China
Unit:RMB/kg
China gallium metal producers' operating rate statistics by province by month
Unit: %
