Garen Semi makes breakthrough in 6-in gallium oxide single crystal by casting method

Hangzhou Garen Semiconductor Co.Asian Metal Copyright It is mainly used for power devices, radio frequency devices and detector parts, and has broad application prospects in rail transit, smart grid, NEVs, PV power generation, 5G mobile communication, national defense and other fields.Asian Metal Copyright, Ltd.Asian Metal Copyright Garen Semiconductor has become the first company capable of producing 6-inch gallium oxide β-Ga2O3 single crystal substrate in China.Asian Metal Copyright announced successful production of high quality 6-inch unintentionally doped and conductive gallium oxide (β-Ga2O3) single crystal by self-developed casting method and the processed 6-inch gallium oxide Gallium oxide substrate, with efforts from the Advanced Semiconductor Research Institute of ZJU-Hangzhou Global Scientific and Technological Innovation Center and State Key Laboratory of Silicon and Advanced Semiconductor Materials of Zhejiang University.Asian Metal Copyright, Ltd.Asian Metal Copyright Garen Semiconductor has become the first company capable of producing 6-inch gallium oxide (β-Ga2O3) single crystal substrate in China.

Gallium oxide (β-Ga2O3) is one of the most concerned ultra-wide bandgap semiconductor materials due to its excellent performance and low-cost manufacturing. It is mainly used for power devices, radio frequency devices and detector parts, and has broad application prospects in rail transit, smart grid, NEVs, PV power generation, 5G mobile communication, national defense and other fields.

.Asian Metal Copyright Garen Semiconductor has become the first company capable of producing 6-inch gallium oxide β-Ga2O3 single crystal substrate in ChinaAsian Metal Copyright