GD Guangda Group to start construction of Mini/Micro LED project next Jan
2021-09-23 14:55:58 [Print]
Recently, Dongguan Development and Reform Bureau released the "notice about additional third batch key projects in 2021", including the Mini/Micro LED project of GD Guangda Group.
According to the notice, GD Guangda third generation semiconductor scientific research and manufacturing center Area I project and GD Guangda third generation semiconductor scientific research and manufacturing center Area II project will base on Mini/Micro LED technology. With a total investment of RMB10 billion (USD1.55 billion), both projects will start construction in January 2022 and go into commercial production in November 2024.
With a total investment of RMB4.4 billion (USD0.68 billion), Area I project covering a land area of 135,203 square meters and a construction area of 283,928 square meters will mainly include precision semiconductor equipment manufacturing, GaN substrate production line, GaN device production line, blue and green Mini/MicroLED epitaxial wafer production line and supporting special gas plant facilities, with 2-4 inches GaN substrate, 2-6 inches silicon-based GaN device, 4 inches blue and green MiniLED epitaxial wafer as major products after completion.
According to the notice, GD Guangda third generation semiconductor scientific research and manufacturing center Area I project and GD Guangda third generation semiconductor scientific research and manufacturing center Area II project will base on Mini/Micro LED technology. With a total investment of RMB10 billion (USD1.55 billion), both projects will start construction in January 2022 and go into commercial production in November 2024.
With a total investment of RMB4.4 billion (USD0.68 billion), Area I project covering a land area of 135,203 square meters and a construction area of 283,928 square meters will mainly include precision semiconductor equipment manufacturing, GaN substrate production line, GaN device production line, blue and green Mini/MicroLED epitaxial wafer production line and supporting special gas plant facilities, with 2-4 inches GaN substrate, 2-6 inches silicon-based GaN device, 4 inches blue and green MiniLED epitaxial wafer as major products after completion.
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