Raytheon Technologies and GF to collaborate to develop new gallium nitride

American Raytheon Technologies, a leading aerospace and defense technology company, and GlobalFoundries (GF), the global leader in feature-rich semiconductor manufacturing, will collaborate to develop and commercialize a new gallium nitride on silicon (GaN-on-Si) semiconductor that will enable game-changing radio frequency performance for 5G and 6G mobile and wireless infrastructure applications.

Under the agreement, Raytheon Technologies will license its proprietary gallium nitride on silicon technology and technical expertise to GF, which will develop the new semiconductor at its Fab 9 facility in Essex Junction, Vermont.
.Asian Metal CopyrightAmerican Raytheon Technologies, a leading aerospace and defense technology company, and GlobalFoundries GF, the global leader in feature-rich semiconductor manufacturing, will collaborate to develop and commercialize a new gallium nitride on silicon GaN-on-Si semiconductor that will enable game-changing radio frequency performance for 5G and 6G mobile and wireless infrastructure applicationsAsian Metal Copyright