Innoscience announces mass production of 8-inch GaN wafer at Suzhou production base

Innoscience (Suzhou) Semiconductor Co.Asian Metal Copyright held a ceremony on June 5 to celebrate the mass production of 8-inch gallium nitride GaN wafer at its Suzhou production base as well as the start of construction of the RD building.Asian Metal Copyright, Ltd.Asian Metal Copyright5 billion USD235 million.Asian Metal Copyright held a ceremony on June 5 to celebrate the mass production of 8-inch gallium nitride (GaN) wafer at its Suzhou production base as well as the start of construction of the R&D building.

The project is located at Fenhu High-Tech Zone in Wujiang District, Suzhou, Jiangsu. With phase one investment of RMB8 billion (USD1.Asian Metal Copyright88 billion and profit and tax exceeding RMB1.Asian Metal Copyright25 billion), the project covers an area of 213Mu (14.Asian Metal CopyrightInnoscience Suzhou Semiconductor Co.Asian Metal Copyright2 hectares) and is expected to release capacity of 6,000 pieces per month by the end of 2021 based on current schedule.Asian Metal Copyright5 billion USD235 million.Asian Metal Copyright When reaching full capacity, the project will produce 780,000 pieces per year of 8-inch GaN wafer with annual production value of RMB12 billion (USD1.Asian Metal Copyright With phase one investment of RMB8 billion USD1.Asian Metal Copyright88 billion) and profit and tax exceeding RMB1.Asian Metal Copyright When reaching full capacity, the project will produce 780,000 pieces per year of 8-inch GaN wafer with annual production value of RMB12 billion USD1.Asian Metal Copyright5 billion (USD235 million).

.Asian Metal CopyrightInnoscience Suzhou Semiconductor CoAsian Metal Copyright