San'an Optoelectronics' wholly-owned subsidiary receives government subsidy
2020-03-26 13:42:38 [Print]
On 25 March, San'an Optoelectronics Co
In December 2017, San'an Optoelectronics signed an investment cooperation agreement with Quanzhou government and Nan'an government on the establishment of one or more project companies in Nan'an Branch, Chip Valley, Quanzhou, Fujian. With a totally investment of RMB33 . 3 billion (USD4 . 70 billion), all projects will go into production within five years and reach design capacity within seven years, with an operation life of no less than 25 years . R&D and manufacturing industrialization project of high-end GaN LED substrate, extension and chip, R&D and manufacturing industrialization project of high-end GaN LED extension and chip, R&D and manufacturing industrialization project of high-power GaN laser and other four industrial clusters will be constructed.
. , Ltd . released an announcement, stating that San'an Semiconductor, its wholly-owned subsidiary, received the "notice about allocating equipment procurement subsidy" from the management committee of Nan'an Branch, Quanzhou Semiconductor Hi-tech Industrial Park . Base on the investment cooperation agreement reached by Quanzhou government, Nan'an government and San'an Optoelectronics, an equipment procurement subsidy of RMB142 . 9002 million (USD20 . 15 million) for San'an Semiconductor was approved . San'an received the subsidy on 23 March, 2020. In December 2017, San'an Optoelectronics signed an investment cooperation agreement with Quanzhou government and Nan'an government on the establishment of one or more project companies in Nan'an Branch, Chip Valley, Quanzhou, Fujian. With a totally investment of RMB33 . 3 billion (USD4 . 70 billion), all projects will go into production within five years and reach design capacity within seven years, with an operation life of no less than 25 years . R&D and manufacturing industrialization project of high-end GaN LED substrate, extension and chip, R&D and manufacturing industrialization project of high-end GaN LED extension and chip, R&D and manufacturing industrialization project of high-power GaN laser and other four industrial clusters will be constructed.