SPIC Huanghe Hydroelectric New Energy puts into operation 2,500tpy capacity of electron grade polycrystalline silicon
2017-06-08 17:39:56 [Print]
High-purity electron grade polycrystalline silicon is the basis of integrated circuit and high-efficiency solar energy products, but in the past China lacked its own production capacity and had to resort to the import market to satisfy its demand for the material, and as a result China has been restrained in its development of the above industries. But recently SPIC Huanghe Hydroelectric New Energy Co., Ltd. reported that, based upon reformed Siemens method, it has successfully developed its own electron grade polycrystalline silicon capacity and will be able to produce 2,500t of the material annually.
By adopting the reformed Siemens method, the company will be able to produce high-purity polycrystalline silicon whose qualities are on a par with those of products made by major German or Japanese enterprises, including an oxygen content＜0.02ppma, carbon content＜0.02ppma, acceptor impurity＜0.03ppba, donor impurity＜0.05ppba, overall metallic impurity in the base＜2ppbw, and silicon purity＞99.9999999%.
In 2014, State Council of China formulated the National Development Outline on Integrated Circuit and also set up the National Investment Fund on Integrated Circuit Industry, a background for quantified production of electron grade polycrystalline silicon. As a result, China will be able to produce its own high-purity polycrystalline silicon and to reduce its dependence upon overseas markets.
Statistics show that China maintains an annual consumption volume of 4,500t of electron grade polycrystalline silicon, and most of high-purity polycrystalline silicon needed by high-efficiency solar energy silicon flake producers are imported from South Korean suppliers such as OCI, which means that once the overseas suppliers cut off their supply, Chinese consumers will be greatly affected in their production.
By adopting the reformed Siemens method, the company will be able to produce high-purity polycrystalline silicon whose qualities are on a par with those of products made by major German or Japanese enterprises, including an oxygen content＜0.02ppma, carbon content＜0.02ppma, acceptor impurity＜0.03ppba, donor impurity＜0.05ppba, overall metallic impurity in the base＜2ppbw, and silicon purity＞99.9999999%.
In 2014, State Council of China formulated the National Development Outline on Integrated Circuit and also set up the National Investment Fund on Integrated Circuit Industry, a background for quantified production of electron grade polycrystalline silicon. As a result, China will be able to produce its own high-purity polycrystalline silicon and to reduce its dependence upon overseas markets.
Statistics show that China maintains an annual consumption volume of 4,500t of electron grade polycrystalline silicon, and most of high-purity polycrystalline silicon needed by high-efficiency solar energy silicon flake producers are imported from South Korean suppliers such as OCI, which means that once the overseas suppliers cut off their supply, Chinese consumers will be greatly affected in their production.
Polysilicon 6N Delivered China
Unit:RMB/kg
China silicon metal producers' inventory to production ratio statistics by province by month
Unit: %
