Japanese gallium oxide power device firm Flosfia gets ￡5m in second-round funding
2017-03-27 09:11:27 [Print]
BEIJING (Asian Metal) 24 Mar 17 - According to the report from foreign media, Japanese gallium oxide power device start-up Flosfia has raised Y750m (￡5m) in series B funding.
Flosfia, which is a spin-out from the Kyoto University, is aiming to commercialise crystalline α-Ga2O3 (corundum/sapphire/ruby structure) in power transistors and Schottky diodes. The firm intends to manufacture 600V TO-220 diodes in 2018 to compete against silicon carbide power devices.
Flosfia, which is a spin-out from the Kyoto University, is aiming to commercialise crystalline α-Ga2O3 (corundum/sapphire/ruby structure) in power transistors and Schottky diodes. The firm intends to manufacture 600V TO-220 diodes in 2018 to compete against silicon carbide power devices.
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